首页> 外文期刊>Applied Physics Letters >Black silicon with controllable macropore array for enhanced photoelectrochemical performance
【24h】

Black silicon with controllable macropore array for enhanced photoelectrochemical performance

机译:黑硅具有可控的大孔阵列,可增强光电化学性能

获取原文
获取原文并翻译 | 示例
           

摘要

Macroporous silicon with multiscale texture for reflection suppression and light trapping was achieved through a controllable electrochemical etching process. It was coated with TiO2 by atomic layer deposition, and used as the photoanode in photocatalytic water splitting. A conformal pn-junction was also built-in in order to split water without external bias. A 45% enhancement in photocurrent density was observed after black silicon etching. In comparison with nano-structured silicon, the etching process here has neither metal contamination nor requirement of vacuum facilities.
机译:通过可控的电化学刻蚀工艺获得了具有多尺度结构的大孔硅,用于抑制反射和捕获光。通过原子层沉积法将其涂覆有TiO2,并用作光催化水分解中的光阳极。还内置了共形的pn结,以在没有外部偏压的情况下分解水。在黑硅蚀刻之后,观察到光电流密度提高了45%。与纳米结构的硅相比,此处的蚀刻工艺既没有金属污染,也不需要真空设备。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号