Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN

摘要

We investigated the characteristics of InGaN-based multiple quantum wells (MQWs) grown on a-plane and c-plane GaN templates, which were grown by metal-organic chemical vapor deposition onto r-plane and c-plane sapphire, respectively. A shorter photoluminescence peak wavelength and peaks with larger full-width at half-maximum are observed for MQWs grown on an a-plane GaN template compared with a c-plane GaN template, despite the same growth conditions used. A growth model based on the atomic configuration of the growing surfaces is proposed to explain the difference in optical emission properties and indium incorporation between a-plane and c-plane MQWs.