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Electronic structure of C and N co-doped TiO2: A combined hard x-ray photoemission spectroscopy and density functional theory study

机译:C和N共掺杂的TiO 2 的电子结构:结合硬X射线光发射光谱和密度泛函理论研究

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We have studied the electronic structure of C and N co-doped TiO using hard x-ray photoelectron spectroscopy and first-principles density functional theory calculations. Our results reveal overlap of the 2p states of O, N, and C in the system which shifts the valence band maximum towards the Fermi level. Combined with optical data we show that co-doping is an effective route for band gap reduction in TiO. Comparison of the measured valence band with theoretical photoemission density of states reveals the possibility of C on Ti and N on O site.
机译:我们已经使用硬X射线光电子能谱和第一原理密度泛函理论计算研究了碳和氮共掺杂的TiO的电子结构。我们的结果表明,系统中O,N和C的2p状态重叠,从而使价带最大值移向费米能级。结合光学数据,我们表明共掺杂是减少TiO带隙的有效途径。将测得的价带与状态的理论光发射密度进行比较,揭示了Ti上碳原子和O原子上N原子的可能性。

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