Nanoscale rectification at the LaAlO /SrTiO interface

摘要

Control over electron transport at scales that are comparable to the Fermi wavelength or mean-freenpath can lead to a variety of electronic devices. Here we report electrical rectification in nanowiresnformed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 andnSrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical rectificationnin the nanowire, analogous to what occurs naturally for Schottky diodes or by design in structuresnwith engineered structural inversion asymmetry. Nanostructures produced in this manner may benuseful in developing a variety of nanoelectronic, electro-optic, and spintronic devices. © 2010nAmerican Institute of Physics. u0004doi:10.1063/1.3459138