High-power and high-speed organic three-dimensional transistors

摘要

Three-dimensional organic field-effect transistors with high current density and highnswitching speed are developed with multiple submicrometer channels arranged perpendicularlynto substrates. The short channel length is defined by the height of a multicolumnar structurenwithout an electron-beam-lithography process. For devices using dinaphthou00042,3n-b:2u0002 ,3u0002-fu0005thienou00043,2-bu0005thiophene, extremely high current density exceeding 10 A/cm2nand fastnswitching within 0.2 u0002s are realized with an on-off ratio of 105n. The unprecedented performance isnbeyond general requirements to control organic light-emitting diodes, so that even more extensivenapplications to higher-speed active-matrices and display-driving circuits can be realized withnorganic semiconductors. © 2010 American Institute of Physics. u0004doi:10.1063/1.3458867