High-power and high-speed organic three-dimensional transistors with submicrometer channels

摘要

Three-dimensional organic field-effect transistors with high current density and high switching speed are developed with multiple submicrometer channels arranged perpendicularly to substrates. The short channel length is defined by the height of a multicolumnar structure without an electron-beam-lithography process. For devices using dinaphtho[2,3 -b:2',3'-f]thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/cm~2 and fast switching within 0.2 μs are realized with an on-off ratio of 105. The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors.