Effect of ferroelectric domain walls on the dielectric properties of PbZrO_3 thin films

摘要

In antiferroelectric PbZrO_3 thin films, a weak residual ferroelectric phase is often observed on the double hysteresis loop and it is important to know its impact on the dielectric properties. To study this residual phase, a low and homogeneous electric field can be used because antiferroelectric domain walls are not sensitive to homogeneous fields; thus, contributions of ferroelectric domain wall motions to permittivity and dielectric losses can be isolated. In this paper, the hyperbolic law characterization is used on lead zirconate thin films, which present a residual ferroelectric phase. The study shows that domain wall contributions of the ferroelectric phase are small (less than 2% of the total permittivity), but their impacts are very important in the overall dielectric losses (≈26%). These losses are, however, lower than those obtained in pure ferroelectric materials due to a residual state composed of well distributed ferroelectric clusters of small size with no interactions between domain walls.