机译:SIO_2层对原子层沉积AL_2O_3基电阻开关存储器
Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;
Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;
Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;
Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;
Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;
Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;
Chungbuk Natl Univ Sch Elect Engn Cheongju 28644 South Korea;
Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;
机译:SiO_2层对原子层沉积Al_2O_3基电阻开关存储器的影响
机译:电阻开关存储器应用中TiO_x / Al_2O_3双层结构的原子层沉积
机译:基于AG / HFO_2的导电桥通过原子层沉积阐述:惰性电极和HFO_2结晶度对电阻切换机构的影响
机译:通过原子层沉积生长的超薄TiO_2薄膜电阻存储器切换
机译:自组装单分子层的气相沉积,作为区域选择性原子层沉积的抗蚀剂。
机译:通过原子层沉积制备的高性能基于HfOx / AlOy的电阻开关存储器交叉点阵列
机译:原子层沉积制备基于HfO x / AlO y的高性能电阻开关存储器交叉点阵列
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。