Dependence of transition behaviors on structure of Sb_(100-x)Er_x films for broadband nonvolatile optical memory

摘要

The crystallization temperature (Tc) and 10-year data-retention temperature enhance from 176 degrees C to 217 degrees C and from 61.5 degrees C to 120.6 degrees C, respectively, when the Er concentration increases from 16 at. % to 28 at. % for Sb100-xErx films. The improvement in the thermal stability of the Sb100-xErx results from Er doping induced the suppression of the A(1g) mode from Sb-Sb bonds. The fast crystallization of the Sb100-xErx film is ascribed to the growth-dominated crystallization mechanism which was confirmed by the in situ microstructure observation. A large optical contrast of Sb100-xErx such as high ON/OFF ratios of both the refractive index (n) and the extinction coefficient (k) between the amorphous and crystalline states results from the formation of resonant bonding in crystalline states. Sb100-xErx demonstrated the repeatable and reversible phase change between two states induced by optical pulses, suggesting a potential candidate for optical storage. Published under license by AIP Publishing.