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Anomalously high electronic thermal conductivity and Lorenz ratio in Bi_2Te_3 nanoribbons far from the bipolar condition

机译:远离双极性条件的Bi_2Te_3纳米带异常高的电子热导率和Lorenz比

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摘要

The Lorenz number (L) of a conductor is the ratio between its electronic thermal conductivity and electrical conductivity. It takes the Sommerfeld value of L-0 = (pi(2)/3)(k(B)/e)(2) in simple, metallically electronic systems where charge and heat are both carried by the same group of quasi-particles that experience elastic scattering. Higher values of L than L-0 are possible in semiconductors where both electrons and holes co-exist at high densities, that is, in bipolar conduction. As a narrow-bandgap semiconductor, Bi2Te3 exhibits L L-0 which has been generally attributed to such bipolar conduction mechanisms. However, in this work, we report that L L-0 is still observed in individual, single-crystal Bi2Te3 nanoribbons even at low temperatures and when degenerately doped, that is, far from the bipolar conduction condition. This discovery calls for different mechanisms to explain the unconventional electronic thermal transport behavior in Bi2Te3. Published under license by AIP Publishing.
机译:导体的洛伦兹数(L)是其电子热导率和电导率之间的比率。在简单的金属电子系统中,电荷和热量都由同一组准粒子携带,因此Sommerfeld值为L-0 =(pi(2)/ 3)(k(B)/ e)(2)经历弹性散射。在电子和空穴都以高密度共存的半导体中,即在双极传导中,L的值可能高于L-0。作为窄带隙半导体,Bi 2 Te 3表现出L> L-0,这通常归因于这种双极传导机制。但是,在这项工作中,我们报告说,即使在低温下以及简并掺杂时(即远离双极性传导条件),在单个的单晶Bi2Te3纳米带中仍然观察到L> L-0。这一发现要求采用不同的机制来解释Bi2Te3中非常规的电子热传输行为。由AIP Publishing授权发布。

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  • 来源
    《Applied Physics Letters》 |2019年第15期|152101.1-152101.5|共5页
  • 作者单位

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Univ Calif Berkeley, Tsinghua Berkeley Shenzhen Inst, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;

    Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Mol Foundry, Berkeley, CA 94720 USA|Univ Calif Berkeley, Calif Inst Quantitat Biosci, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;

    Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea;

    Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Univ Calif Berkeley, Tsinghua Berkeley Shenzhen Inst, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;

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