Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells

摘要

Dynamic compression of GaAs quantum wells was achieved to examine the direct-to-indirect transition in a reduced dimension semiconductor structure under uniaxial strain conditions. Our results show that the transformation deviates significantly from the electronic structure predictions using bulk deformation potentials. This finding is attributed to the suppression of real-space type-II transitions by quantum state interactions due to the presence of large anisotropic strains. Published by AIP Publishing.