Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

摘要

Nonpolar (11(2) over bar 0) a-plane InGaN/GaN multiple-quantum-well light-emitting diodes were grown by metalorganic chemical vapor deposition on reduced-defect density hydride-vapor-phase-epitaxy lateral epitaxially overgrown a-plane GaN templates. Direct current output power of 240 muW was measured at 20 mA for a 300x300 mum(2) device, and dc output powers as high as 1.5 mW were measured at 250 mA. DC electroluminescence (EL) measurements yielded a peak at 413.5 nm, corresponding with the room-temperature photoluminescence peak. The EL peak position was independent of drive current and a 23.5 nm linewidth was realized at 20 mA. The current-voltage characteristics of these diodes showed a forward voltage (V-f) of 3.3 V with a series resistance of 7.8 Omega. (C) 2004 American Institute of Physics.