High-performance long-wavelength HgCdTe infrared detectors grown on silicon substrates

摘要

Long-wavelength HgCdTe heterostructures on silicon (100) substrates have been grown using metal-organic vapor phase epitaxy. Test diodes have been fabricated from this material using mesa technology and flip-chip bonding. We have demonstrated excellent resistance-area product characteristics for diodes with a 10.2 mum cutoff wavelength. R(0)A values approaching 10(3) Omega cm(2) at 80 K have been measured and the resistance-area product maintained above 10(2) Omega cm(2) at 1 V reverse bias. Variable temperature R(0)A values correspond to expected generation-recombination loss mechanisms between 60 and 120 K. Current-voltage characteristics of two diodes at opposite sides of an array indicate that a very uniform imaging long-wavelength infrared array could be fabricated from this material. (C) 2004 American Institute of Physics.