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'Umbrella'-like precipitates in nitrogen-doped Czochralski silicon wafers

机译:氮掺杂的切克劳斯基硅片中出现“伞状”沉淀

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摘要

Nitrogen effect on nucleation of oxygen precipitates in Czochralski Si has been investigated by transmission electron microscopy, Z-contrast imaging, and electron energy loss spectrometry (EELS). We have examined unusual "umbrella" shape oxygen precipitates in bulk of ingot in depths of more than 40 μm. Two predominant orientations of "umbrella" have been found along [110] and [-1-10] directions. We have investigated the distribution of nitrogen, oxygen, and interstitial Si by EELS profile taken simultaneously with HR Z-contrast image. The mechanism of nitrogen-enriched oxygen precipitates nucleation has been discussed.
机译:通过透射电子显微镜,Z射线造影和电子能量损失谱(EELS)研究了氮对Czochralski Si中氧沉淀成核的影响。我们已经检查了超过40μm深度的不寻常的“伞状”形状的氧沉淀在晶锭中。沿着[110]和[-1-10]方向发现了“伞”的两个主要方向。我们通过与HR Z对比图像同时拍摄的EELS剖面研究了氮,氧和间隙Si的分布。讨论了富氮氧沉淀成核的机理。

著录项

  • 来源
    《Applied Physics Letters》 |2004年第11期|p.1889-1891|共3页
  • 作者单位

    Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695-7916;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;
  • 关键词

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