High-performance carbon nanotube transistors on SrTiO_(3)/Si substrates

摘要

Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-κ dielectric SrTiO_(3)/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO_(3) as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 μS/μm. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube-electrode interface due to the high-κ SrTiO_(3) decreases or eliminates the nanotube-electrode Schottky barrier.