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METHOD OF FABRICATING CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR HAVING IMPROVED ADHESIVE STRENGTH WITH RESPECT TO SUBSTRATE, AND CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR FABRICATED THEREBY
METHOD OF FABRICATING CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR HAVING IMPROVED ADHESIVE STRENGTH WITH RESPECT TO SUBSTRATE, AND CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR FABRICATED THEREBY
The present invention relates to a method of fabricating a carbon nanotube-based field effect transistor having improved adhesive strength with respect to a substrate, and the carbon nanotube-based field effect transistor fabricated thereby. The method of fabricating the carbon nanotube-based field effect transistor includes the steps of: forming an oxide layer on a substrate; forming a photoresist pattern on the oxide layer; forming a metal layer on an entire surface of a sample including a photoresist pattern; a lift-off step of removing the photoresist; absorbing a carbon nanotube on the substrate without the photoresist; performing heat treatment for the substrate in which the carbon nanotube is absorbed; and removing the metal layer. According to the present invention, since adhesive strength between the substrate and the carbon nanotube is improved, stability and reliability of a field effect transistor may be improved. When the field effect transistor is applied to a liquid sensor, a life of the sensor may extend and the reliability with respect to a result measured using the sensor may be improved.;COPYRIGHT KIPO 2014
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