首页> 外国专利> METHOD OF FABRICATING CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR HAVING IMPROVED ADHESIVE STRENGTH WITH RESPECT TO SUBSTRATE, AND CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR FABRICATED THEREBY

METHOD OF FABRICATING CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR HAVING IMPROVED ADHESIVE STRENGTH WITH RESPECT TO SUBSTRATE, AND CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR FABRICATED THEREBY

机译:制备具有相对于基质而言改善的粘合强度的基于碳纳米管的场效应晶体管的方法,以及由此制造的基于碳纳米管的场效应晶体管的方法

摘要

The present invention relates to a method of fabricating a carbon nanotube-based field effect transistor having improved adhesive strength with respect to a substrate, and the carbon nanotube-based field effect transistor fabricated thereby. The method of fabricating the carbon nanotube-based field effect transistor includes the steps of: forming an oxide layer on a substrate; forming a photoresist pattern on the oxide layer; forming a metal layer on an entire surface of a sample including a photoresist pattern; a lift-off step of removing the photoresist; absorbing a carbon nanotube on the substrate without the photoresist; performing heat treatment for the substrate in which the carbon nanotube is absorbed; and removing the metal layer. According to the present invention, since adhesive strength between the substrate and the carbon nanotube is improved, stability and reliability of a field effect transistor may be improved. When the field effect transistor is applied to a liquid sensor, a life of the sensor may extend and the reliability with respect to a result measured using the sensor may be improved.;COPYRIGHT KIPO 2014
机译:本发明涉及一种相对于基板具有提高的粘合强度的基于碳纳米管的场效应晶体管的制造方法,以及由此制造的基于碳纳米管的场效应晶体管。制造基于碳纳米管的场效应晶体管的方法包括以下步骤:在衬底上形成氧化物层;以及在衬底上形成氧化物层。在氧化物层上形成光刻胶图案;在包括光刻胶图案的样品的整个表面上形成金属层;去除光刻胶的剥离步骤;在没有光致抗蚀剂的情况下将碳纳米管吸收在基板上;对吸收有碳纳米管的基板进行热处理;并去除金属层。根据本发明,由于提高了基板与碳纳米管之间的粘合强度,因此可以提高场效应晶体管的稳定性和可靠性。当将场效应晶体管应用于液体传感器时,可以延长传感器的使用寿命,并可以提高使用该传感器测量的结果的可靠性。; COPYRIGHT KIPO 2014

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