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InAs/InAsP composite channels for antimonide-based field-effect transistors

机译:基于锑化物的场效应晶体管的InAs / InAsP复合通道

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We report the growth and transport characteristics of stepped InAs/InAs_(1-x)P_x quantum wells with AlSb barriers. Electron mobilities and carrier concentrations in these composite stepped quantum wells were studied as a function of growth temperature and phosphorus content. For InAs_(1-x)P_x grown at 430℃ substrate temperature (nominal x = 0.2), a high 22 500 cm~2/Vs electron mobility was observed, while 7100 cm~2/V s mobility was observed in a single strained InAs_(1-x)P_x quantum well layer. Heterostructure field-effect transistors fabricated using the composite quantum wells exhibited increased breakdown voltage and a 14:1 reduction in source-drain dc conduction when compared to a similar InAs-channel device.
机译:我们报告了具有AlSb势垒的阶梯式InAs / InAs_(1-x)P_x量子阱的生长和传输特性。研究了这些复合阶梯量子阱中电子迁移率和载流子浓度与生长温度和磷含量的关系。在衬底温度为430℃(标称x = 0.2)下生长的InAs_(1-x)P_x,观察到高22 500 cm〜2 / Vs电子迁移率,而在单个应变下观察到7100 cm〜2 / Vs电子迁移率。 InAs_(1-x)P_x量子阱层。与类似的InAs沟道器件相比,使用复合量子阱制造的异质结构场效应晶体管表现出更高的击穿电压,源漏DC传导降低了14:1。

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