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Complementary response of In_2O_3 nanowires and carbon nanotubes to low-density lipoprotein chemical gating

机译:In_2O_3纳米线和碳纳米管对低密度脂蛋白化学门控的互补反应

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摘要

In_2O_3 nanowire and carbon nanotube transistors were used to study the chemical gating effect of low-density lipoproteins (LDL). The adsorption of LDL on these two different surfaces was investigated, which revealed a tenfold more LDL particle adsorption on carbon nanotubes than on In_2O_3 nanowires because of hydrophobic/hydrophilic interactions. The conductance of field-effect transistors based on nanowires and nanotubes showed complementary response after the adsorption of LDL: while In_2O_3 nanowire transistors exhibited higher conductance accompanied by a negative shift of the threshold voltage, the nanotube transistors showed lower conductance after the exposure. This is attributed to the complementary doping type of In_2O_3 nanowires (n type) and carbon nanotubes (p type).
机译:In_2O_3纳米线和碳纳米管晶体管用于研究低密度脂蛋白(LDL)的化学门控作用。研究了LDL在这两个不同表面上的吸附,这表明由于疏水/亲水相互作用,碳纳米管上的LDL颗粒吸附量比In_2O_3纳米线上的吸附量高十倍。吸附低密度脂蛋白后,基于纳米线和纳米管的场效应晶体管的电导表现出互补的响应:虽然In_2O_3纳米线晶体管表现出更高的电导率并伴随着阈值电压的负移,但纳米管晶体管在暴露后表现出更低的电导率。这归因于In_2O_3纳米线(n型)和碳纳米管(p型)的互补掺杂类型。

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