Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

摘要

A high-quality thick AlN layer without cracks was grown on sapphire by the combination of the high-temperature metal-organic vapor phase epitaxial growth and epitaxial lateral overgrowth methods. The dislocation behavior and growth mode of AlN are investigated in detail. The dislocation density of the AlN layer thus grown was less than 10~7 cm~(-2).