Resonant frequency response of plasma wave detectors

摘要

Resonant behavior in the frequency dependent responsivity of a high electron mobility transistor based plasma wave detector from 0.1 to 6 GHz is clearly demonstrated at T=0.3 to 4 K. By independently determining the frequency dependent power coupling, the authors are able to measure the absolute responsivity of the device. Clear peaks in the responsivity are observed at 2.0 and 4.4 GHz. At elevated temperatures up to 20 K, the resonant behavior vanishes due to increased phonon scattering. Taken collectively these experiments provide strong evidence that plasma wave rectification is the dominant mechanism of device response.