Ni_2Si nanowires of extraordinarily low resistivity

摘要

Ultralong, polycrystalline Ni_2Si nanowires are fabricated by combining sidewall transfer lithography with self-aligned silicidation. Upon formation at 500℃, the nanowires that are 400 μm long with a rectangular cross section of 37.5 by 25.3 nm are characterized by a resistivity of 25 ± 1 μΩ cm which is similar to the value for Ni_2Si thin films. Further annealing at 800℃ results in an extraordinarily low wire resistivity of 10 μΩ cm. Such a drastic decrease in resistivity is attributed to a significant grain growth and a low density of defects in the nanowires.