A unipolar accumulation transistor configuration has recently been proposed and experimentally demonstrated. This transistor has a simple structure with Ohmic contacts and only one doping type. The device, termed the accumulation metal oxide semiconductor field effect transistor (AMOSFET), relies on having a nanoscale depth dimension, which forces the current through an accumulated (on state) or depleted (off state) region. Detailed numerical modeling presented here elucidates the previously proposed and experimentally observed AMOSFET features. These include linear and saturation currents which depend on doping rather than gate capacitance, good subthreshold swing behavior, and low threshold voltages. This modeling predicts on-off ratios exceeding 10~9.
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