Effect of ionization rates on dynamic recovery processes during electron-beam irradiation of 6H-SiC

摘要

The authors have investigated the effects of 200 and 300 keV electron-beam irradiations on amorphization in 6H-SiC at 100 and 295 K. Amorphization is induced by the accumulation of defects produced by direct atomic displacements. Dynamic recovery of these defects during irradiation, due to temperature increases and ionization effects, results in increases in the amorphization dose. By comparing with previous data for 2 MeV electrons and 1.5 MeV Xe ions, the results demonstrate that ionization-enhanced recovery in 6H-SiC dramatically increases above an ionization rate threshold.