机译:Sn诱导的Si(111)-(2 3〜(1/2)×2 3〜(1/2))表面Sn岛上应变弛豫的原子尺度研究
Institute of Physics, The Chinese Academy of Sciences, Beijing 100080, People's Republic of China Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA;
Institute of Physics, The Chinese Academy of Sciences, Beijing 100080, People's Republic of China;
Institute of Physics, The Chinese Academy of Sciences, Beijing 100080, People's Republic of China;
Institute of Physics, The Chinese Academy of Sciences, Beijing 100080, People's Republic of China;
Institute of Physics, The Chinese Academy of Sciences, Beijing 100080, People's Republic of China;
Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China;
Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA;
Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China Institute of Physics, The Chinese Academy of Sciences, Beijing 100080, People's Republic of China;
机译:原子力显微镜中的真实形貌,原子弛豫和短程化学相互作用:以α-Sn/ Si(111)-(3〜(1/2)X 3〜(1/2))R30°表面为例
机译:通过分子束外延在Si(111)表面上银岛的新型生长:原子尺度优选高度的高原。
机译:Ag / Ge(111)-3〜(1/2)×3〜(1/2)表面生长的纳米Co-2×2岛结构中应变松弛的表现
机译:原子和分子氧在3C-SiC(111)和((111))表面上的吸附:第一性原理研究
机译:1/3 ML锡/锗(111)和1/3 ML铅/锗(111)表面的低温相变的原子尺度结构研究。
机译:在Ge(111)-c(2×8)和Ag / Ge(111)-(√3×√3)表面上生长的含镍纳米岛
机译:由Ge(111)c(2x8)表面上的二元Sn / Ag覆盖层形成的3x3表面的电子和原子结构:ARPES,LEED和STM研究