Pinning of recombination-enhanced dislocation motion in 4H-SiC: Role of Cu and EH_1 complex

摘要

We report on the pinning of recombination-enhanced dislocation motion in 4H-SiC by the implantation of Cu. The Cu was found to be preferentially gettered at basal plane dislocations (BPDs). Both EH_1 and Z_(1/2) center were detected in 4H-SiC by cathodoluminescence. It was noticed that the EH_1 has high luminescence intensity at the central part of the BPDs, while the Z_(1/2) does not. The complex of Cu and EH_1 is regarded to be the cause for the pinning effect. The possible reason for the pinning is discussed.