机译:分子束外延生长条件对In_xGa_(1-x)Bi_yAs_(1-y)的组成和光学性质的影响
Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA;
Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA;
Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, USA;
Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA;
机译:等离子体辅助分子束外延在整个组成范围内In_xGa_(1-x)N薄膜生长期间的温度效应
机译:分子束外延生长条件对InxGa1-xBiyAs1-y的组成和光学性质的影响
机译:原子源工作参数对等离子体辅助分子束外延生长In_xGa_(1-x)N纳米线的结构和光学性能的影响
机译:通过分子束外延生长的INAS / GaAs量子点的大小,组合物和光学性质的生长速率影响
机译:生长动力学和热力学对分子束外延生长氮化镓性能的影响。
机译:分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质:热退火的影响
机译:分子束外延选择性生长的纳米柱状InGaN / GaN异质结构的生长条件,形貌和光学性质之间的相关性
机译:用分子束外延生长和表征In(1-x)Ga(x)as(y)p(1-y)和Gaas