Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride

摘要

For some InN films large amounts of excess nitrogen are seen at low growth temperatures. Recent studies have revised downward the defect formation energies for several forms of nitrogen rich point-defects in InN. Here we calculate an activation energy of 0.4±0.1eV for the thermally activated removal of much of the excess nitrogen, believed to be interstitial nitrogen. This low energy barrier is shown to support the case for a low defect formation energy of the same native defect, although it is pointed out that non-equilibrium plasma based conditions are required to reach these lower defect formation energies.