Indium Nitride Film Growth by Metal Organic Chemical Vapor Deposition with Nitrogen Activation in Electron Cyclotron Resonance Discharge Sustained by 24 GHz Gyrotron Radiation

摘要

We report the results of the first experiments on the growth of indium nitride films by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition. Discharge sustained by the radiation of a technological gyrotron with a frequency of 24 GHz and power up to 5 kW was used to provide active nitrogen flow. The use of higher frequency microwave radiation for plasma heating provides a higher plasma density, and more active nitrogen flow. Mirror-smooth homogeneous hexagonal InN films were grown on ittria-stabilized zirconia and sapphire substrates. It was shown that single-crystal InN films can be grown on Al_2O_3 (0001) substrates if a double buffer layer of InN/GaN is used. The growth rate of 1 μm/h was demonstrated in this case. Film properties are studied by optical and electron microscopies, secondary ion mass spectroscopy, X-ray diffraction, and photoluminescence.