Thermal conductivity of Er~(+3):Y_2O_3 films grown by atomic layer deposition

摘要

Cross-plane thermal conductivity of 800, 458, and 110nm erbium-doped crystalline yttria (Er~(+3):Y_2O_3) films deposited via atomic layer deposition was measured using the 3ω method at room temperature. Thermal conductivity results show 16-fold increase in thermal conductivity from 0.49 W m~(-1)KT~(-1) to 8 W m~(-1)K~(-1) upon post deposition annealing, partially due to the suppression of the number of the -OH/H_2O bonds in the films after annealing. Thermal conductivity of the annealed film was ～70% lower than undoped bulk single crystal yttria. The cumulative interface thermal resistivity of substrate-Er~(3+):Y_2O_3-metal heater was determined to be ～2.5 × 10~(-8) m~2 K/W.