Transient characterization of the electroforming process in TiO_2 based resistive switching devices

摘要

The transient electroforming process of TiO_2-based resistive switching devices is investigated using a pulsed voltage method, and the electroforming time is found to vary from 10~(-8) s to 10~(-1) s as function of pulse magnitude (3-8 V) and ambient temperature (25-100 ℃). Pulsed experiments and thermal simulations reveal that Joule self-heating has a significant effect on the electroforming dynamics, specially for electroforming voltages above 5.5 V where there is little dependence on ambient temperature and the electroforming time (10-100 ns) is much shorter than the device thermal time constant (≈2μs).