Silicon surface texturing with a combination of potassium hydroxide and tetra-methyl ammonium hydroxide etching

摘要

A two step silicon surface texturing, consisting of potassium hydroxide (KOH) etching followed by tetra-methyl ammonium hydroxide etching is presented. This combined texturing results in 13.8% reflectivity at 600 nm compared to 16.1% reflectivity for KOH etching due to the modification of microstructure of etched pyramids. This combined etching also results in significantly lower flat-band voltage (V_(FB)) (-0.19V compared to -1.3V) and interface trap density (D_(it)) (2.13 × 10~(12)cm~(-2)eV~(-1) compared to 3.2 × 10~(12) cm~(-2)eV~(-1)).