机译:AlN / GaN / AlN双异质结场效应晶体管在应变量子阱中的二维电子气
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA;
机译:二维电子气的AlN / GaN / AlGaN和AlN / GaN / InAlN异质结构的参数对其电性能和晶体管特性的影响
机译:极化库仑场散射对应变AlGaN / AlN / GaN异质结构场效应晶体管中低温电子迁移率的影响
机译:浮栅结构对AlGaN / AlN / GaN异质结构场效应晶体管中二维电子气体密度和电子迁移率的影响
机译:使用低频噪声和电流瞬变方法对In AlN / AlN / GaN异质结构场效应晶体管进行降解分析:热声子效应
机译:Gan-On-Aln作为高压互补电子设备的平台
机译:表面钝化对超薄AlN / GaN异质结构场效应晶体管中AlN势垒应力和散射机理的影响
机译:InxAl1-xN / AlN / \ ud中二维电子气的双子带占据 铟含量低(0.064≤x≤0.140)的GaN / AlN异质结构
机译:无掺杂GaN / alN / alGaN径向纳米线异质结构作为高电子迁移率晶体管。