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机译:X射线光电子能谱法测定HfO_2 / Al_(0.25)Ga_(0.75)N的能带对准:SiH_4表面处理的影响
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260;
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260;
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260;
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research);
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research);
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260;
机译:角度分辨X射线光电子能谱法测定HfO_2 / In_(0.18)Al_(0.82)N的能带排列
机译:X射线光电子能谱法测定HfO_2 /多层MoS_2界面的能带排列:CHF_3处理的影响
机译:具有单个Al_(0.75)Ga_(0.25)As电流阻挡层的850nm In_(0.15)Al_(0.08)Ga_(0.77)As / Al_(0.3)Ga_(0.7)As垂直腔面发射激光器的高温稳定性
机译:X射线光电子能谱法测定h-BN / Al_(0.7)Ga_(0.3)N异质结的能带对准
机译:近环境压力X射线光电子谱的卤化物钙钛表面降解研究
机译:X射线金表面的光电子能谱分析紫外/臭氧疗法巯基化的DNa低聚物的去除后
机译:两种声子模三元合金中的电子 - 声子耦合 $ al_ {0.25} In_ {0.75} as / Ga_ {0.25} In_ {0.75} as量子井