机译:NtO_2中间层的自组装和Pt / Nb / HfO_2 / Pt结构中的可配置电阻切换
Department of Electronic Material Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 2601, Australia,Department of Physics, University of Chittagong, Chittagong-4331, Bangladesh;
Department of Electronic Material Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 2601, Australia;
Department of Electronic Material Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 2601, Australia;
Department of Electronic Material Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 2601, Australia;
机译:基于纳米薄NbO_2层的Pt / NbO_2 / Pt叠层的阈值转换特性,用于交叉点型电阻式存储器
机译:Pt / TiO_2 / Pt结构中的可电配置电铸和双极电阻切换
机译:Ag / TaO_x / Pt结构在双极性和阈值行为之间可配置的超低工作电压电阻切换
机译:电阻切换CO / HFO_2 / PT结构导电长丝的磁阻
机译:阐述和优化了高级计算应用的电阻式随机存取存储器切换行为
机译:通过插入HfO2:Al2O3(HAO)电介质薄层来增强Pt / BaTiO3 / ITO结构中的电阻切换特性
机译:PT-PR0.67CA0.33MNO3-PT夹层结构中的脉冲长度和幅度相关电阻式电阻机构