AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism

摘要

The piezoelectric response of AlGaN/GaN circular HEMT pressure sensing device integrated on AlGaN/GaN diaphragm was experimentally investigated and supported by the finite element method modeling. The 4.2 μm thick diaphragm with 1500 μm diameter was loaded by the dynamic peak-to-peak pressure up to 36 kPa at various frequencies. The piezoelectric charge induced on two Schottky gate electrodes of different areas was measured. The frequency independent maximal sensitivity 4.4 pC/kPa of the piezoelectric pressure sensor proposed in a concept of micro-electromechanical system was obtained on the gate electrode with larger area. The measurement revealed a linear high performance piezoelectric response in the examined dynamic pressure range.