Electric field modulation of Schottky barrier height in graphene/MoSe_2 van der Waals heterointerface

摘要

We demonstrate a vertical field-effect transistor based on a graphene/MoSe_2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe_2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe_2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10~5. These results point to the potential high performance of the graphene/MoSe_2 vdW heterostructure for electronics applications.