METHOD FOR PRODUCING A CRYSTALLINE LAYER IN A III-N COMPOUND BY VAN DER WAALS EPITAXY FROM GRAPHENE

摘要

The invention relates to a method for manufacturing a layer of interest (3) in a III-N crystalline compound by epitaxy from a layer of graphene (2), characterized in that it comprises, prior to a phase of nucleation of the layer of interest (3), a step of thermal treatment of the layer of graphene (2) in which it is subjected to a first temperature (T_tt) no lower than 1050° C. and to a stream of ammonia.