机译:由于铝膜上的表面等离子体共振,InGaN量子阱产生的绿色发射增强
Institute for Materials Chemistry and Engineering, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan;
Department of Electronic Science and Engineering, Kyoto University, Katsura Campus, Nishikyo-ku, Kyoto 615-8510, Japan;
Department of Electronic Science and Engineering, Kyoto University, Katsura Campus, Nishikyo-ku, Kyoto 615-8510, Japan;
Institute for Materials Chemistry and Engineering, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan;
Institute for Materials Chemistry and Engineering, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan;
机译:金纳米粒子的表面等离子体激元提高绿色InGaN / GaN多量子阱的发射效率
机译:通过耦合到二维银阵列中的表面等离激元,增强了来自InGaN / GaN多量子阱的绿色发射。
机译:深紫外激发下表面等离子体共振增强铝薄膜的光电子发射
机译:量子狭窄的效果在Ingan / GaN量子中的作用阱在其与光发射增强表面等离子体的耦合过程中
机译:纳米银膜的光学表征:表面等离子体共振和表面增强光谱。
机译:使用铝薄膜的紫外线表面等离子耦合发射
机译:时间分辨光致发光光谱仪探测的表面等离子体激元提高了InGaN / GaN量子阱的自发发射速率
机译:表面等离子体增强薄银膜的非线性光电发射。