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Two-color detector: Mercury-cadmium-telluride as a terahertz and infrared detector

机译:双色探测器:碲化汞镉碲化物和红外探测器

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摘要

In this paper, issues associated with the development of infrared (IR) and terahertz (THz) radiation detectors based on HgCdTe are discussed. Two-color un-cooled and cooled to 78 K narrow-gap mercury-cadmium-telluride semiconductor thin layers with antennas were considered both as sub-THz (sub-THz) direct detection bolometers and 3-10 μm IR photoconductors. The noise equivalent power (NEP) for one of the detectors studied at v ≈ 140 GHz reaches NEP_(300K) ≈ 4.5 × 10~(-10) W/Hz~(1/2) and NEP_(78K) ≈ 5 × 10~(-9) W/Hz~(1/2). The same detector used as an IR pho-toconductor showed the responsivity at temperatures T = 78K and 300 K with signal-to-noise ratio S/N ≈ 750 and 50, respectively, under illumination by using IR monochromator and globar as a thermal source.
机译:本文讨论了与基于HgCdTe的红外(IR)和太赫兹(THz)辐射探测器的开发相关的问题。带有天线的两色未冷却并冷却至78 K窄间隙汞镉碲化物半导体薄层被认为是亚太赫兹(sub-THz)直接检测辐射热计和3-10μm红外光电导体。在v≈140 GHz下研究的一个检测器的噪声等效功率(NEP)达到NEP_(300K)≈4.5×10〜(-10)W / Hz〜(1/2)和NEP_(78K)≈5×10 〜(-9)W / Hz〜(1/2)。使用红外单色仪和globar作为热源,在相同的检测器中用作红外光电导体,在T = 78K和300 K的温度下分别具有信噪比S / N≈750和50时显示响应度。

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  • 来源
    《Applied Physics Letters》 |2015年第8期|082104.1-082104.4|共4页
  • 作者单位

    Institute of Semiconductor Physics, 03028 Kiev, Ukraine;

    Institute of Semiconductor Physics, 03028 Kiev, Ukraine;

    Institute of Semiconductor Physics of SB RAS, 630090 Novosibirsk, Russia;

    Institute of Semiconductor Physics, 03028 Kiev, Ukraine;

    Institute of Semiconductor Physics, 03028 Kiev, Ukraine;

    Institute of Semiconductor Physics, 03028 Kiev, Ukraine;

    Institute of Semiconductor Physics, 03028 Kiev, Ukraine;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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