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Evidence of ferroelectricity in ferrimagnetic κ-Al_2O_3-type In_(0.25)Fe_(1.75)O_3 films

机译:铁磁κ-Al_2O_3型In_(0.25)Fe_(1.75)O_3膜中铁电的证据

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摘要

We report direct evidence of the multiferroic nature of the κ-Al_2O_3-type In_xFe_(2-x)O_3 films (x - 0-0.25) grown on the SrTiO_3(111) substrates at room temperature. The κ-Al_2O_3-type In_xFe_(2-x)O_3 films show a clear saturated and opened P-E hysteresis loop at room temperature with a remnant polarization of 1.8 μCcm~(-2) . Also, the ferrimagnetic-incommensurate magnetic phase transition is observed at 205 K, which is compatible with the recent report on the In_(0.24)Fe_(1.16)O_3 nanorods. The results indicate that the substitution of Me~(3+) ion, which has a larger ionic radius than Fe~(3+), is effective to grow good insulating ferroelectric κ-Al_2O_3-type Fe_2O_3 films, leading to the genuine multiferroic nature.
机译:我们报告了在室温下在SrTiO_3(111)衬底上生长的κ-Al_2O_3-型In_xFe_(2-x)O_3薄膜(x-0-0.25)的多铁性的直接证据。 κ-Al_2O_3型In_xFe_(2-x)O_3薄膜在室温下显示出清晰的饱和和开放的P-E磁滞回线,剩余极化为1.8μCcm〜(-2)。同样,在205 K处观察到亚铁磁性不相称的磁性相变,这与有关In_(0.24)Fe_(1.16)O_3纳米棒的最新报告相兼容。结果表明,具有比Fe〜(3+)更大的离子半径的Me〜(3+)离子的置换可有效地生长良好的绝缘铁电κ-Al_2O_3型Fe_2O_3薄膜,从而产生真正的多铁性。

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  • 来源
    《Applied Physics Letters》 |2016年第16期|162901.1-162901.4|共4页
  • 作者单位

    Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259-J2-19, Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan;

    Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;

    Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259-J2-19, Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan;

    Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259-J2-19, Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan;

    Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259-J2-19, Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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