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Half-metallicity in highly L2_1-ordered CoFeCrAl thin films

机译:高L2_1级CoFeCrAl薄膜的半金属性

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摘要

The structural, magnetic, and electron-transport properties of Heusler-ordered CoFeCrAl thin films are investigated experimentally and theoretically. The films, sputtered onto MgO and having thicknesses of about 100 nm, exhibit virtually perfect single-crystalline epitaxy and a high degree of L2_1 chemical order. X-ray diffraction and transmission-electron microscopy show that the structure of the films is essentially of the L2_1 Heusler type. The films are ferrimagnetic, with a Curie temperature of about 390 K, and a net moment of 2 μ_B per formula unit. The room temperature resistivity is 175 μΩ cm; the carrier concentration and mobility determined from the low temperature (5K) measurement are 1.2 × 10~(18)cm~(-3) and 33cm~2/V s, respectively. In contrast to the well-investigated Heusler alloys such as Co_2(Cr_(1-x)Fe_x)Al, the CoFeCrAl system exhibits two main types of weak residual A2 disorder, namely, Co-Cr disorder and Fe-Cr disorder, the latter conserving half-metallicity. Point-contact Andreev reflection yields a lower bound for the spin polarization, 68% at 1.85 K, but our structural and magnetization analyses suggest that the spin polarization at the Fermi level is probably higher than 90%. The high resistivity, spin polarization, and Curie temperature are encouraging in the context of spin electronics.
机译:实验和理论研究了Heusler级CoFeCrAl薄膜的结构,磁性和电子传输性能。溅射到MgO上并具有约100 nm厚度的薄膜表现出几乎完美的单晶外延和高度的L2_1化学有序性。 X射线衍射和透射电子显微镜表明,膜的结构基本上是L2_1 Heusler型的。所述膜是亚铁磁性的,具有约390K的居里温度,并且每个配方单位的净力矩为2μB。室温电阻率为175μΩcm;由低温(5K)测量确定的载流子浓度和迁移率分别为1.2×10〜(18)cm〜(-3)和33cm〜2 / V s。与经过充分研究的Heusler合金(例如Co_2(Cr_(1-x)Fe_x)Al)相比,CoFeCrAl系统表现出两种主要的弱残留A2无序类型,即Co-Cr无序和Fe-Cr无序。保持半金属性。点接触安德烈耶夫反射产生的自旋极化的下限为1.85 K时为68%,但是我们的结构和磁化分析表明,费米能级的自旋极化可能高于90%。在自旋电子器件的背景下,高电阻率,自旋极化和居里温度令人鼓舞。

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  • 来源
    《Applied Physics Letters》 |2016年第14期|142410.1-142410.5|共5页
  • 作者单位

    Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, USA,Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA;

    Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA,Department of Physics, South Dakota State University, Brookings, South Dakota 57007, USA;

    Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA;

    Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA;

    Department of Physics, Arizona State University, Tempe, Arizona 85287, USA;

    Department of Physics, Arizona State University, Tempe, Arizona 85287, USA;

    Department of Physics, Arizona State University, Tempe, Arizona 85287, USA;

    School of Basic Sciences, Indian Institute of Technology, Mandi, Himachal Pradesh 175001, India;

    School of Basic Sciences, Indian Institute of Technology, Mandi, Himachal Pradesh 175001, India;

    Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, USA,Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA;

    Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, USA,Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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