Magnetic domain wall motion in Co/Ni nanowires induced by a sloped electric field

摘要

We report the sloped-electric-field (SEF)-driven motion of a magnetic domain wall (DW) in a Co/ Ni nanowire with a perpendicular anisotropy using micromagnetic simulations. The results show that the DW velocity increases in proportion to the modulation ratio of the SEF, and rapidly decreases above a threshold ratio of SEF (i.e., the breakdown). We derived the analytical equation of the effective magnetic field caused by the SEF, and show the resultant DW velocity. Also, we found that the maximum DW velocity is three times faster when the Dzyaloshinskii-Moriya interaction is 0.06 erg/cm2. The results presented here offer a promising route for the design of non-volatile memory and logic devices using only the electric-field.