Magnetic Domain Wall Motion in Co/Ni Nanowires Induced by a Sloped Electric Field

摘要

Recently, the domain wall (DW) motion device has attracted a great deal of attention, because it will be a candidate for a nonvolatile information storage, which has a potential for reducing consumption power [1]. In this device, the DW motion is controlled by the magnetic field or the current. However, it is required to reduce the consumption power. In recent years, as a new method for reducing the power, the electric field-driven DW motion method has been proposed [2], [3]. In these studies, they used not only a electric field, but also a magnetic field for DW motion to increase the driving force. In this study, we perform the micromagnetic simulations, and investigate the DW motion by using a sloped-electric-field (SEF). Since the anisotropy field in the magnetic nanowire can be changed at each position in this approach [4], it lead to change the DW energy at each position, and accordingly, the DW moves only by this electric field [5].