...
机译:具有GaP应变补偿层的InAs / GaAsSb量子点太阳能电池的效率增强
Division of Industrial Metrology, Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea;
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA,Applied Materials, Inc., Santa Clara, California 95054-3299, USA;
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA;
Division of Industrial Metrology, Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea;
Division of Industrial Metrology, Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea;
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA;
机译:具有GaP应变补偿层的InAs / GaAs量子点太阳能电池的器件性能提高
机译:Stranski-Krastanov InAs / GaAsSb量子点与亚单层量子点堆叠耦合,有望成为中带太阳能电池的吸收体
机译:应变工程Ga(In)NAs层的插入对高效太阳能电池InAs / GaAs量子点光学性能的影响
机译:薄的Gaassb封端层,用于改善INAS / GaAs量子点太阳能电池的性能
机译:用于太阳能电池的高质量InAs / GaAsSb量子点的外延生长。
机译:GaInAs应变降低层与嵌入三结GaInP / Ga(In)As / Ge太阳能电池Ga(In)As子电池中的InAs量子点结合的研究
机译:薄的Gaassb封端层,用于改善INAS / GaAs量子点太阳能电池的性能