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首页> 外文期刊>Applied Physics Letters >Observation of Quantum Hall effect in an ultra-thin (Bi_(0.53)Sb_(0.47))_2Te_3 film
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Observation of Quantum Hall effect in an ultra-thin (Bi_(0.53)Sb_(0.47))_2Te_3 film

机译：超薄（Bi_（0.53）Sb_（0.47））_ 2Te_3薄膜的量子霍尔效应观察

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摘要

We report the observation of the Quantum Hall effect from the topological surface states in both the Dirac electron and Dirac hole regions in a 4 quintuple layer (Bi_(0.53)Sb_(0.47))_2Te_3 film grown on GaAs (111)B substrates. The Fermi level is sitting within the enlarged bulk band gap due to the quantum confinement of the ultra-thin film and can be tuned through the Dirac point by gate biases. Furthermore, the Hall resistance R_(xy) shows even denominator plateaus, which could be fractional Quantum Hall states. This may be due to the hybridization between the top and bottom surface states and suggests the possible way to manipulate the interaction of two surfaces for potential spintronic devices.
机译：我们报告了从生长在GaAs（111）B衬底上的4层五层（Bi_（0.53）Sb_（0.47））_ 2Te_3膜中的Dirac电子和Dirac空穴区域中的拓扑表面状态观察到的量子霍尔效应。由于超薄膜的量子限制，费米能级位于扩大的体带隙内，并且可以通过栅极偏置通过狄拉克点进行调谐。此外，霍尔电阻R_（xy）显示均匀的分母平稳期，可能是分数量子霍尔状态。这可能是由于顶表面状态与底表面状态之间的杂化所致，并提出了可能的方法来操纵潜在自旋电子器件的两个表面的相互作用。

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  • 来源
    《Applied Physics Letters》 |2017年第21期|212401.1-212401.4|共4页
  • 作者

    Wenqin Zou; Wei Wang; Xufeng Kou; Murong Lang; Yabin Fan; Eun Sang Choi; Alexei V. Fedorov; Kejie Wang; Liang He; Yongbing Xu; Kang. L. Wang;

  • 作者单位

    National Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China;

    York-Nanjing Joint Center (YNJC) for Spintronics and Nano Engineering, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China;

    Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095, USA;

    Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095, USA;

    Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095, USA;

    National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA;

    Advanced Light Source Division, Lawrence Berkeley national laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA;

    York-Nanjing Joint Center (YNJC) for Spintronics and Nano Engineering, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China;

    York-Nanjing Joint Center (YNJC) for Spintronics and Nano Engineering, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China,Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095, USA;

    York-Nanjing Joint Center (YNJC) for Spintronics and Nano Engineering, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China;

    Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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