机译:外延Bi_2Te_3薄膜中电流感应自旋极化的检测
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758, USA;
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758, USA;
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758, USA;
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758, USA;
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758, USA;
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758, USA;
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758, USA;
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758, USA;
机译:圆极化光电导电流晶体绝缘体Bi_2Te_3电流诱导的自旋极化观察
机译:多晶和外延Pb(Zr,Ti)O-3薄膜中瞬态电流的极化相关性研究
机译:锰掺杂对SrTiO_3上(K_(0.44),Na_(0.52),Li_(0.04))(Nb_(0.84),Ta_(0.10),Sb_(0.06))O_3外延薄膜中残余极化和漏电流的影响
机译:极化铁电VVDF / TrFE共聚物薄膜中激光诱导的DC极化电流和空间极化孔燃烧的电光产生
机译:电流诱导的旋转极化和动态核极化:砷化镓中电子和核自旋极化的产生和操纵
机译:极化诱导外延Pb(Zr0.20Ti0.80)O3薄膜中的自掺杂
机译:在外延Bi $ _2 $ Te $ _3 $中检测电流引起的自旋极化 薄膜
机译:由Bi2se3中的自旋动量锁定引起的电荷电流引起的自旋极化的电检测。