Direct electrical detection of current-induced spin polarization due to spin-momentum locking in topological insulators

摘要

A method for directly electrically generating and detecting spin polarization in topological insulators comprising depositing a first and fourth contact on a layer of Bi₂Se₃ and applying a current between the contacts, which creates a net spin polarization due to spin-momentum locking. A second (comprising ferromagnet/tunnel barrier) and third contact are deposited for detecting the spin polarization. A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi₂Se₃ and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.