Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers

摘要

We report a comparative study of carrier dynamics in semiconductor saturable absorber mirrors (SESAMs) containing InGaAs quantum wells and InGaAsN quantum wells (QWs). The static and dynamic reflectivity spectra were measured with a Fourier-transform-infrared-spectrometer and a pump-probe setup, respectively. The influence of rapid thermal annealing (RTA) on carrier dynamics was studied. Due to the reduction of defect states by RTA we observed an increase of the static reflectivity and an increase of the electron–hole recombination time.