Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

摘要

Device structure and basic properties of the MoS2/HZO FeFET. a Three-dimensional schematic representation of the MoS2/HZO FeFET. b Schematic cross section of the MoS2/HZO FeFET. c Top-view SEM image of the fabricated MoS2/HZO FeFET with Ti/Au source/drain electrodes, HZO ferroelectric gate insulators, and MoS2 channels. d Height profile using contact-mode AFM along the red line in c, validating the height of the MoS2 channel.