Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

摘要

( ) Schematic view of p-GeSe Schottky diode. ( ) Optical microscope image of the device. ( ) Band diagram of Pd p-GeSe Cr. characteristics of ( ) p-GeSe FET with Pd/Au and ( ) Cr/Au with V = 1 V to 3 V.T.the semi-logarithmic plots of transfer characteristics are depicted in the insets on each figure. characteristics as a function of gate bias ( ) Schottky contacts effect of p-GeSe with Cr/Au. ( ) Ohmic contact behavior with Pd/Au.